The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Mar. 13, 2014
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Takuro Ushida, Toyama, JP;

Tsukasa Kamakura, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Kimihiko Nakatani, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/405 (2013.01); C23C 16/45527 (2013.01); C23C 16/45534 (2013.01); C23C 16/52 (2013.01); H01L 21/02186 (2013.01); H01L 21/02277 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a metal element and a halogen group to the substrate; and supplying an oxidant to the substrate. In the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant. In the act of supplying the precursor, the catalyst is not supplied to the substrate.


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