The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2018

Filed:

Feb. 21, 2017
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Carmine Miccoli, Boise, ID (US);

Christian Caillat, Boise, ID (US);

Akira Goda, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/3459 (2013.01);
Abstract

First memory cells are programmed to an intermediate level from a lowest level, corresponding to a lowest data state, where the first memory cells are to be programmed from the intermediate level to levels other than the lowest level. The first memory cells are not read or verified at the intermediate level. Different first memory cells of the first memory cells that are programmed to the intermediate level are respectively programmed to different levels of the levels other than the lowest level from the intermediate level. A second memory cell is programmed to a lower level than the different levels of the levels other than the lowest level from the lowest level while the different first memory cells are respectively programmed to the different levels of the levels other than the lowest level from the intermediate level.


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