The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Jun. 30, 2015
Csmc Technologies Fab1 Co., Ltd., Wuxi New District, CN;
Guangtao Han, Wuxi New District, CN;
Guipeng Sun, Wuxi New District, CN;
CSMC TECHNOLOGIES FAB1 CO., LTD., Jiangsu, CN;
Abstract
The present invention relates to a junction field effect transistor. The junction field effect transistor comprises a substrate (), a buried layer in the substrate, a first well region () and a second well region () that are on the buried layer, a source lead-out region (), a drain lead-out region (), and a first gate lead-out region () that are in the first well region (), and a second gate lead-out region () in the second well region (). A Schottky junction interface () is disposed on the surface of the first well region (). The Schottky junction interface () is located between the first gate lead-out region () and the drain lead-out region (), and is isolated from the first gate lead-out region () and the drain lead-out region () by means of isolation structures. The present invention also relates to a manufacturing method for a junction field effect transistor.