The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Aug. 11, 2016
United Microelectronics Corp., Hsinchu, TW;
Shih-Yin Hsiao, Taibao, TW;
Kai-Kuen Chang, Keelung, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A bipolar junction transistor (BJT) device includes a semiconductor substrate, a first doping region with a first conductivity, a second doping region with a second conductivity, a third doping region with the first conductivity, at least one stacked block and a conductive contact. The first doping region is formed in the semiconductor substrate. The second doping region is formed in the first doping region. The at least one stacked block is formed on and insulated from the second doping region. The third doping region is formed in the second doping region and disposed adjacent to the at least one stacked block. The conductive contact electrically connects the at least one stacked block with the third doping region.