Dynamic random access memory and method of manufacturing the same

Abstract

A dynamic random access memory (DRAM) includes a substrate, a plurality of isolation structures, a plurality of conductive structure sets, a plurality of bit-line structures, and a plurality of spacers. The substrate has a plurality of active areas. The isolation structures are located in the substrate and extending along a first direction. Each of the isolation structures is disposed between two adjacent active areas. The conductive structure sets are disposed in parallel along the first direction and on the substrate. The bit-line structures are disposed in parallel along a second direction and on the substrate. The bit-line structures penetrate through the conductive structure sets. The spacers are disposed in parallel along the second direction and on sidewalls of the bit-line structures, so as to electrically isolate the bit-line structures from the conductive structure sets.