The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Jun. 22, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Joachim Weyers, Hoehenkirchen, DE;

Anton Mauder, Kolbermoor, DE;

Franz Hirler, Isen, DE;

Andreas Meiser, Sauerlach, DE;

Ulrich Glaser, Putzbrunn, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/06 (2013.01); H01L 27/0814 (2013.01); H01L 29/407 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H01L 29/8725 (2013.01);
Abstract

A semiconductor device includes a semiconductor body including a first trench extending into the semiconductor body from a first surface and a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench. The other one of the anode region and the cathode region includes a first semiconductor region directly adjoining the one of the anode region and the cathode region from outside of the first trench, thereby constituting a pn junction. The semiconductor device further includes a conducting path through a sidewall of the first trench.


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