The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Nov. 19, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Ming-Shiou Hsieh, Chiayi County, TW;
Chun-Yao Yang, Kaohsiung, TW;
Shi-You Liu, Kaohsiung, TW;
Rong-Sin Lin, Taichung, TW;
Han-Ting Yen, Yunlin County, TW;
Neng-Hui Yang, Hsinchu, TW;
Tsai-Yu Wen, Tainan, TW;
Ching-I Li, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for manufacturing fins includes following steps. A substrate including a plurality of fins formed thereon is provided. At least an ion implantation is performed to the fins. A thermal process is performed after the ion implantation. An insulating layer is formed on the substrate, and the fins are embedded in the insulating layer. Thereafter, a portion of the insulating layer is removed to form an isolation structure on the substrate, and the fins are exposed from a top surface of the isolation structure. The insulating layer is formed after the ion implantation and the thermal process. Or, the isolation structure is formed before the ion implantation, or between the ion implantation and the thermal process.