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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9947532 B1

PDFFull Text
Date of Patent:
Apr. 17, 2018

Filed:

Feb. 06, 2017

Forming zig-zag trench structure to prevent aspect ratio trapping defect escape

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Judson R. Holt, Wappingers Falls, NY (US);

Shogo Mochizuki, Clifton Park, NY (US);

Alexander Reznicek, Troy, NY (US);

Melissa A. Smith, Wappingers Falls, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Younmin Cai

Hoffman Warnick, LLC

Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02639 (2013.01); H01L 21/02458 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/02636 (2013.01); H01L 21/02647 (2013.01); H01L 21/2022 (2013.01); H01L 21/3065 (2013.01); H01L 21/30625 (2013.01); H01L 21/7605 (2013.01); H01L 21/76248 (2013.01); H01L 21/76294 (2013.01); H01L 29/0642 (2013.01);
Abstract

A method of fabricating a semiconductor device can include the following steps: (i) providing an initial sub-assembly including a trench-defining layer having a top surface; (ii) refining the initial sub-assembly into a first trench-cut intermediate sub-assembly by removing material to form an upper tier of a trench extending downward from the top surface of the trench-defining layer, the upper tier of the trench including two lateral trench surfaces and a bottom trench surface; and (iii) refining the first trench-cut intermediate sub-assembly into a second trench-cut intermediate sub-assembly by selectively removing material in a downwards direction starting from the bottom surface of the trench to form a lower tier of the trench, with the selective removal of material leaving at least a first defect blocking member in the lower tier of the trench.

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