The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 09, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Kuoyuan Hsu, San Jose, CA (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A memory device includes a memory cell that is configured to store a data bit, comprising at least one read transistor that is configured to form either a discharging path or a leakage path when the data bit is read; a conductive line coupled to the read transistor; and at least a first track transistor, coupled to the conductive line, and configured to provide a first current signal having a first current level that tracks a second current level of a second current signal, wherein the second current signal is provided when either one of the discharging and leakage paths is formed, and wherein the first the second current signals are used to determine a logical state of the data bit.