The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Oct. 31, 2016
Applicants:
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventors:
Da-Ming Zhuang, Beijing, CN;
Ming Zhao, Beijing, CN;
Ming-Jie Cao, Beijing, CN;
Li Guo, Beijing, CN;
Ze-Dong Gao, Beijing, CN;
Yao-Wei Wei, Beijing, CN;
Assignees:
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); C23C 14/08 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); C23C 14/58 (2006.01); C03C 17/245 (2006.01); C04B 35/453 (2006.01); C23C 14/34 (2006.01); H01L 21/324 (2006.01); C23C 14/35 (2006.01); C04B 35/01 (2006.01); C04B 35/50 (2006.01); C04B 35/626 (2006.01); C04B 35/645 (2006.01);
U.S. Cl.
CPC ...
C23C 14/086 (2013.01); C03C 17/245 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/50 (2013.01); C04B 35/6261 (2013.01); C04B 35/645 (2013.01); C23C 14/08 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); C23C 14/35 (2013.01); C23C 14/5806 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/324 (2013.01); H01L 29/24 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); C03C 2217/23 (2013.01); C03C 2218/154 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01);
Abstract
A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5˜2.