The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2018

Filed:

Nov. 20, 2012
Applicants:

Dowa Metaltech Co., Ltd, Tokyo, JP;

Tokuyama Corporation, Yamaguchi, JP;

Inventors:

Hideyo Osanai, Nagano, JP;

Yukihiro Kitamura, Nagano, JP;

Hiroto Aoki, Yamaguchi, JP;

Yukihiro Kanechika, Yamaguchi, JP;

Ken Sugawara, Yamaguchi, JP;

Yasuko Takeda, Ibaraki, JP;

Assignees:

DOWA METALTECH CO., LTD., Tokyo, JP;

TOKUYAMA CORPORATION, Tamaguchi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B21D 39/00 (2006.01); C04B 37/02 (2006.01); H05K 1/03 (2006.01); H05K 3/02 (2006.01); H01L 23/373 (2006.01); B23K 1/19 (2006.01); B32B 15/04 (2006.01); B32B 18/00 (2006.01); C04B 35/581 (2006.01); C04B 41/91 (2006.01); H05K 3/38 (2006.01);
U.S. Cl.
CPC ...
C04B 37/02 (2013.01); B23K 1/19 (2013.01); B32B 15/04 (2013.01); B32B 18/00 (2013.01); C04B 35/581 (2013.01); C04B 37/026 (2013.01); C04B 41/91 (2013.01); H01L 23/3735 (2013.01); H05K 1/0306 (2013.01); H05K 3/022 (2013.01); C04B 2235/96 (2013.01); C04B 2235/963 (2013.01); C04B 2237/125 (2013.01); C04B 2237/127 (2013.01); C04B 2237/366 (2013.01); C04B 2237/407 (2013.01); C04B 2237/52 (2013.01); C04B 2237/704 (2013.01); C04B 2237/706 (2013.01); H01L 2924/0002 (2013.01); H05K 3/38 (2013.01); Y10T 428/24355 (2015.01);
Abstract

After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrateof aluminum nitride sintered body so that the ceramic substratehas a residual stress of not higher than −50 MPa and so that the surface of the ceramic substrateto be bonded to the metal platehas an arithmetic average roughness Ra of 0.15 to 0.30 μm, a ten-point average roughness Rz of 0.7 to 1.1 μm and a maximum height Ry of 0.9 to 1.7 μm while causing the ceramic substrate to have a flexural strength of not higher than 500 MPa and causing the thickness of a residual stress layerformed along the surface of the ceramic substrateto be 25 μm or less, the metal plateof copper or a copper alloy is bonded to the ceramic substrate, which is obtained by the wet blasting treatment, via a brazing filler metalto produce a metal/ceramic bonding substrate which has an excellent bonding strength of the ceramic substrateto the metal plateand which has an excellent heat cycle resistance.


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