The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
May. 27, 2016
Infineon Technologies Ag, Neubiberg, DE;
Stefan Clara, Linz, AT;
Thomas Grille, Villach, AT;
Ursula Hedenig, Villach, AT;
Peter Irsigler, Obernberg am Inn, AT;
Bernhard Jakoby, Linz, AT;
Ventsislav M. Lavchiev, Gallneukirchen, AT;
Thomas Ostermann, Velden am Wörthersee, AT;
Thomas Popp, Falkenstein/Gfäll, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×10quantum structures per cm. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.