The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Nov. 30, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Shang-Yi Liu, New Taipei, TW;
Samuel C. Pan, Hsinchu, TW;
Chih-I Wu, Taipei, TW;
Tsung-Chin Cheng, Taoyuan City, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Abstract
A method and structure for providing high-quality transferred graphene layers for subsequent device fabrication includes transferring graphene onto a hydrophobic surface of a hydrophobic layer and performing a thermal treatment process. In various embodiments, a substrate including an insulating layer is provided, and a hydrophobic layer is formed over the insulating layer. In some examples, a graphene layer is transferred onto the hydrophobic layer. By way of example, the transferred graphene layer has a first carrier mobility. In some embodiments, after transferring the graphene layer, an annealing process is performed, and the annealed graphene layer has a second carrier mobility greater than the first carrier mobility.