The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Jun. 22, 2016
Infineon Technologies Austria Ag, Villach, AT;
Stefan Sedlmaier, Munich, DE;
Markus Zundel, Egmating, DE;
Franz Hirler, Isen, DE;
Johannes Baumgartl, Riegersdorf, AT;
Anton Mauder, Kolbermoor, DE;
Ralf Siemieniec, Villach, AT;
Oliver Blank, Villach, AT;
Michael Hutzler, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining an active area, forming a vertical trench from the first surface into the semiconductor body, forming a field dielectric layer at least on a side wall and a bottom wall of the vertical trench, depositing a conductive layer on the field dielectric layer, forming a closed cavity on the conductive layer in the vertical trench, and forming an insulated gate electrode on the closed cavity in the vertical trench.