The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Nov. 01, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/165 (2006.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01); H01L 29/78 (2006.01); H01L 29/267 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 29/04 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/2003 (2013.01); H01L 29/22 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H01L 29/517 (2013.01);
Abstract
A field effect transistor and a semiconductor device including the same are provided. The semiconductor device may include a channel layer, which is provided on a substrate and includes a two-dimensional atomic layer made of a first material, and a source/drain layer, which is provided on the substrate and includes a second material. The first material may be one of phosphorus allotropes, the second material may be one of carbon allotropes, and the channel layer and the source/drain layer may be connected to each other by covalent bonds between the first and second materials.