The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2018

Filed:

Dec. 09, 2016
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Britta Wutte, Feistritz, AT;

Sylvain Leomant, Pörtschach am W., AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 27/148 (2006.01); H01L 29/80 (2006.01); H01L 27/108 (2006.01); H01L 21/336 (2006.01); H01L 21/331 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H02M 3/158 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 29/407 (2013.01); H01L 29/4238 (2013.01); H01L 29/7813 (2013.01); H02M 3/158 (2013.01); H01L 29/41766 (2013.01);
Abstract

A semiconductor device includes a first gate trench and a second gate trench in a first main surface of a semiconductor substrate. A mesa is arranged between the first gate trench and the second gate trench. The mesa separates the first gate trench from the second gate trench. Each of the first and second gate trenches includes first sections extending in a first direction and second sections connecting adjacent ones of the first sections. The second sections of the first gate trench are disposed opposite to the second sections of the second gate trench with respect to a plane perpendicular to the first direction.


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