The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2018

Filed:

Aug. 21, 2015
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ching-Yen Hsaio, Tainan, TW;

Cheng-Ming Wu, Tainan, TW;

Shih-Lu Hsu, Tainan, TW;

Chien-Hsian Wang, Minxiong Township, Chiayi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11521 (2017.01); H01L 29/06 (2006.01); H01L 21/28 (2006.01); H01L 21/027 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/0276 (2013.01); H01L 21/28008 (2013.01); H01L 21/28273 (2013.01); H01L 29/0649 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The first gate stack includes a first gate and a second gate over the first gate, and the first gate and the second gate are electrically isolated from each other. The semiconductor device structure includes a ring structure surrounding the first gate stack. The ring structure is made of a conductive material.


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