The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Oct. 31, 2013
Broadcom Corporation, Irvine, CA (US);
Shom Surendran Ponoth, Newport Beach, CA (US);
Changyok Park, Irvine, CA (US);
Akira Ito, Irvine, CA (US);
AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD., Singapore, SG;
Abstract
A fin-shaped field-effect transistor device is provided. The fin-shaped field effect transistor device may include a semiconductor substrate having a top and a bottom surface. The fin-shaped field effect transistor device may also include a fin structure disposed on the top surface of the semiconductor substrate, where the fin structure includes a first sidewall and a second sidewall opposite of the first sidewall. The first sidewall is adjacent to a first region of the top surface of the semiconductor substrate and the second sidewall is adjacent to a second region of the top surface of the semiconductor substrate. The fin-shaped field effect transistor device may also include an insulation layer disposed above the fin structure and the first and second regions of the top surface. The fin-shaped field effect transistor device may also include a conductor structure disposed above and adjacent to the insulation layer.