The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Sep. 02, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jian-Hong Lin, Yunlin County, TW;
Hsin-Chun Chang, Taipei, TW;
Shiou-Fan Chen, Hsinchu, TW;
Chwei-Ching Chiu, Hsinchu, TW;
Yung-Huei Lee, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a semiconductor device includes forming a first opening in an insulating layer, forming a second opening in the insulating layer, forming a third opening in the insulating layer and filling the first opening, the second opening and the third opening with a conductive material. The first opening has a width and a length. The second opening has a width less than the length of the first opening, and is electrically connected to the first opening. The third opening has a width less than the width of the second opening, and is electrically connected to the second opening.