The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Mar. 30, 2016
Qualcomm Incorporated, San Diego, CA (US);
Francois Ibrahim Atallah, Raleigh, NC (US);
Hoan Huu Nguyen, Durham, NC (US);
Keith Alan Bowman, Morrisville, NC (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell is disclosed. In one aspect, a leakage-aware activation control circuit is provided for a dynamic read circuit configured to perform read operations on a memory bit cell. To prevent or mitigate contention between the delayed keeper circuit and a read port circuit in the dynamic read circuit pulling a dynamic node to opposite voltage levels when a read operation is initiated, the leakage-aware activation control circuit is configured to adaptively control activation timing of the delayed keeper circuit based on a comparison of N-type Field-Effect Transistor (NFET) leakage current to P-type FET (PFET) leakage current. In this manner, the leakage-aware activation control circuit can adaptively adjust the activation timing of the delayed keeper circuit based on the actual relative strengths of NFETs and PFETs.