The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Dec. 02, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Zhibiao Zhou, Singapore, SG;

Chen-Bin Lin, Taipei, TW;

Su Xing, Singapore, SG;

Chi-Chang Shuai, Hsinchu, TW;

Chung-Yuan Lee, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 23/535 (2006.01); H01L 29/22 (2006.01); H01L 29/861 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 23/535 (2013.01); H01L 28/40 (2013.01); H01L 29/0603 (2013.01); H01L 29/1079 (2013.01); H01L 29/22 (2013.01); H01L 29/24 (2013.01); H01L 29/861 (2013.01);
Abstract

The present invention provides a semiconductor device including a semiconductor substrate, a first well, a second well, a gate electrode, an oxide semiconductor structure and a diode. The first well is disposed in the semiconductor substrate and has a first conductive type, and the second well is also disposed in the semiconductor substrate, adjacent to the first well, and has a second conductive type. The gate electrode is disposed on the first well. The oxide semiconductor structure is disposed on the semiconductor substrate and electrically connected to the second well. The diode is disposed between the first well and the second well.


Find Patent Forward Citations

Loading…