The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Nov. 29, 2016
Applicant:

Ultratech, Inc., San Jose, CA (US);

Inventor:

David M. Owen, Redondo Beach, CA (US);

Assignee:

Ultratech, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01); G01B 9/02 (2006.01); G01B 11/16 (2006.01); G01B 11/24 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G01B 9/02098 (2013.01); G01B 11/161 (2013.01); G01B 11/2441 (2013.01); H01L 22/12 (2013.01); H01L 23/544 (2013.01); G01B 2210/56 (2013.01); H01L 2223/54426 (2013.01);
Abstract

Systems and methods of characterizing wafer shape using coherent gradient sensing (CGS) interferometry are disclosed. The method includes measuring at least 3×10data points on a wafer surface using a CGS system to obtain a topography map of the wafer surface. The data are collected on a wafer for pre-processing and post-processing of the wafer, and the difference calculated to obtain a measurement of the effect of the process on wafer surface shape. The process steps for processing the same wafer or subsequent wafers are controlled based on measured process-induced change in the wafer surface shape in order to improve the quality of the wafer processing.


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