The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Apr. 14, 2014
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Tsuyoshi Ohtsuki, Annaka, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method for evaluating a semiconductor wafer including preparing a reference wafer in which contamination element and amount of contamination are known, forming a plurality of cells including p-n junctions on the reference wafer, measuring junction leakage currents in the plurality of cells on the reference wafer to acquire a distribution of the junction leakage currents of the reference wafer, associating the distribution of the junction leakage currents of the reference wafer with a contamination element, forming a plurality of cells including p-n junctions on a wafer to be measured, measuring junction leakage currents in the plurality of cells on the wafer to be measured to acquire a distribution of the junction leakage currents of the wafer to be measured, and identifying a contamination element of the wafer to be measured based on the association.