The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Apr. 09, 2014
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823456 (2013.01); H01L 21/823412 (2013.01); H01L 27/088 (2013.01); H01L 29/0607 (2013.01); H01L 29/66545 (2013.01); H01L 29/66621 (2013.01); H01L 29/49 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device with an increased effective gate length or an increased effective channel width, and a method of forming the same are provided. The effective gate length or the effective channel width of the device is increased by lowering a top surface of an oxide isolation structure below the gate of the semiconductor device.