The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Jun. 13, 2014
Applicants:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Assignees:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
National Taiwan University, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); C23C 16/047 (2013.01); H01L 21/0228 (2013.01); H01L 21/02225 (2013.01); H01L 21/02351 (2013.01); H01L 21/0332 (2013.01);
Abstract
A process for fabricating an integrated circuit is provided. The process includes providing a substrate, forming a hard mask upon the substrate by one of atomic-layer deposition and molecular-layer deposition, and exposing the hard mask to a charged particle from one or more charged particle beams to pattern a gap in the hard mask. In the alternative, the process includes exposing the hard mask to a charged particle from one or more charged-particle beams to pattern a structure on the hard mask.