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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9934968 B1

PDFFull Text
Date of Patent:
Apr. 03, 2018

Filed:

Nov. 09, 2016

Method for manufacturing p-type zinc oxide film

Applicants:

Nagoya Institute of Technology, Nagoya-Shi, JP;

Ngk Insulators, Ltd., Nagoya-Shi, JP;

Inventors:

Masaki Tanemura, Nagoya, JP;

Morimichi Watanabe, Nagoya, JP;

Jun Yoshikawa, Nagoya, JP;

Tsutomu Nanataki, Nagoya, JP;

Assignees:

Nagoya Institute of Technology, Nagoya, JP;

NGK Insulators, Ltd., Nagoya, JP;

Attorney:

Burr & Brown, PLLC

Primary Examiner:

Earl Taylor

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 14/32 (2006.01); H01J 37/32 (2006.01); C23C 14/08 (2006.01); C23C 14/22 (2006.01); C23C 14/58 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02554 (2013.01); C23C 14/0021 (2013.01); C23C 14/086 (2013.01); C23C 14/22 (2013.01); C23C 14/325 (2013.01); C23C 14/5806 (2013.01); H01J 37/32055 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02579 (2013.01); H01L 21/02614 (2013.01); H01L 21/02631 (2013.01); H01J 2237/332 (2013.01);
Abstract

There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The method for producing a p-type zinc oxide film according to the present invention comprises the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film.

Find Patent Forward Citations

Tanemura, Masaki. (2018). Method for manufacturing p-type zinc oxide film (U.S. Patent No. 9934968). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9934968

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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