The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Oct. 19, 2015
Freescale Semiconductor, Inc., Austin, TX (US);
Perry H. Pelley, Austin, TX (US);
Anirban Roy, Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A memory device includes a non-volatile memory (NVM) array and a memory controller. The NVM array has four partitions in which each partition has as plurality of groups of NVM cells. The memory controller that performs a written operation on each of the four partitions in four cycles per group of NVM cells beginning a clock cycle apart in which two of the four clock cycles for the write operation are for an array write that requires a relatively high current and that the array write for each partition overlaps no more than one other array write so that a peak current of all four write operations is no more than twice the peak current of one group. The NVM cells may be magnetic tunnel junctions (MTJs) which have significantly faster written times than typical NVM cells.