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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9929262 B1

PDFFull Text
Date of Patent:
Mar. 27, 2018

Filed:

Sep. 26, 2016

3-5 device with doped regions and method of fabricating

Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Masato Nishimori, Atsugi, JP;

Kozo Makiyama, Kawasaki, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:

Fujitsu Patent Center

Primary Examiner:

Asok K Sarkar

Assistant Examiner:

Grant Withers

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/265 (2006.01); H01L 23/66 (2006.01); H01L 29/66 (2006.01); H03F 1/32 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H01L 29/08 (2006.01); H03F 3/24 (2006.01); H01L 29/417 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/26546 (2013.01); H01L 23/66 (2013.01); H01L 29/0843 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H03F 1/3247 (2013.01); H03F 1/3252 (2013.01); H03F 3/19 (2013.01); H03F 3/21 (2013.01); H03F 3/245 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/4903 (2013.01); H03F 2200/204 (2013.01); H03F 2200/333 (2013.01);
Abstract

A semiconductor device includes a carrier transit layer including a first region and second and third regions having a density of a donor impurity element higher than that of the first region, an InAlGaN (0<X<1, 0<Y<1, 0<X+Y≤1) carrier supply layer provided over the carrier transit layer and having a density of a donor impurity element lower than that of the second and third regions, a source electrode provided over the second region, a drain electrode provided over the third region, and a gate electrode provided over the carrier supply layer between the source electrode and the drain electrode.

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