The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Apr. 07, 2016
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Peter Moens, Zottegem, BE;
Jaume Roig-Guitart, Oudenaarde, BE;
Marnix Tack, Merelbeke, BE;
Johan Camiel Julia Janssens, Asse, BE;
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
An electronic device can include a low-side HEMT including a segmented gate electrode; and a high-side HEMT coupled to the low-side HEMT, wherein the low-side and high voltage HEMTs are integrated within a same semiconductor die. In another aspect, an electronic device can include a source electrode; a low-side HEMT; a high-side HEMT coupled to the low-side HEMT; and a resistive element. In an embodiment, the resistive element can be coupled to the source electrode and a gate electrode of the high voltage HEMT, and in another embodiment, the resistive element can be coupled to the source electrode and a drain of the low-side HEMT. A process of forming an electronic device can include forming a channel layer over a substrate; and forming a gate electrode over the channel layer. The gate electrode can be a segmented gate electrode of a HEMT.