The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Dec. 20, 2016
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Zailong Bian, Boise, ID (US);
Janos Fucsko, Hatfield, PA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 27/115 (2017.01); H01L 21/762 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/762 (2013.01); H01L 21/764 (2013.01); H01L 27/115 (2013.01); H01L 29/0653 (2013.01);
Abstract
The invention includes semiconductor constructions having trenched isolation regions. The trenches of the trenched isolation regions can include narrow bottom portions and upper wide portions over the bottom portions. Electrically insulative material can fill the upper wide portions while leaving voids within the narrow bottom portions. The trenched isolation regions can be incorporated into a memory array, and/or can be incorporated into an electronic system. The invention also includes methods of forming semiconductor constructions.