The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Mar. 15, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Takaharu Konomi, Kumamoto, JP;
Kazunori Inoue, Kumamoto, JP;
Naoki Tsumura, Kumamoto, JP;
Kensuke Nagayama, Kumamoto, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A thin film transistor substrate includes: a thin film transistor including: a first insulating film covering a gate electrode; a semiconductor channel layer selectively provided on the first insulating film; a second insulating film provided on the semiconductor channel layer; a first source electrode and a first drain electrode selectively provided on the second insulating film, a second source electrode and a second drain electrode provided on the first source electrode and the first drain electrode, respectively, a third insulating film that covers the second source electrode and the second drain electrode; a third source electrode connected to the semiconductor channel layer via a first contact hole provided through the third insulating film, the second and the first source electrode; a third drain electrode connected to the semiconductor channel layer via a second contact hole provided through the third insulating film, the second drain electrode, and the first drain electrode.