The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Nov. 22, 2016
United Microelectronics Corp., Hsinchu, TW;
Te-Chiu Tsai, New Taipei, TW;
Shih-Yin Hsiao, Chiayi County, TW;
Ching-Wei Teng, Taoyuan, TW;
Tun-Jen Cheng, Hsinchu, TW;
Hung-Yi Tsai, Taipei, TW;
Shan-Shi Huang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for forming gate structures for a HV device and a MV device is provided. The method includes forming a HV oxide layer on the substrate, covering a first region predetermined for forming the HV device. Further in the method, a dielectric mask is formed on a central portion of the HV oxide layer. A thermal oxidation process is performed to form a MV oxide layer on the substrate at a second region predetermined for forming the MV device, wherein peripheral portions of the HV oxide layer not covered by the dielectric mask grow thicker. The dielectric mask is removed. A conductive layer is formed over the substrate. The conductive layer, the HV oxide layer, the MV oxide layer are patterned to form the gate structures.