The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Dec. 14, 2015
Applicant:
Solexel, Inc., Milpitas, CA (US);
Inventors:
Takao Yonehara, Sunnyvale, CA (US);
Virendra V. Rana, Los Gatos, CA (US);
Sean M. Seutter, San Jose, CA (US);
Mehrdad M. Moslehi, Los Altos, CA (US);
Subramanian Tamilmani, Fremont, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/78 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 31/18 (2006.01); B23K 26/00 (2014.01); B23K 26/08 (2014.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); B23K 26/70 (2014.01); B23K 26/082 (2014.01); B23K 26/0622 (2014.01); B81C 1/00 (2006.01); B42D 25/00 (2014.01); B23K 26/244 (2014.01); H01L 33/00 (2010.01); B23K 101/40 (2006.01); H01L 25/065 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7813 (2013.01); B23K 26/0006 (2013.01); B23K 26/0054 (2013.01); B23K 26/0057 (2013.01); B23K 26/0093 (2013.01); B23K 26/0622 (2015.10); B23K 26/082 (2015.10); B23K 26/0869 (2013.01); B23K 26/244 (2015.10); B23K 26/702 (2015.10); B42D 25/00 (2014.10); B81C 1/0038 (2013.01); B81C 1/0088 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/76254 (2013.01); H01L 21/76259 (2013.01); H01L 31/022441 (2013.01); H01L 31/0682 (2013.01); H01L 31/1892 (2013.01); H01L 33/0079 (2013.01); B23K 2201/40 (2013.01); B23K 2203/52 (2015.10); B81C 2201/0192 (2013.01); B81C 2201/0194 (2013.01); H01L 25/0657 (2013.01); H01L 33/0095 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49107 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1461 (2013.01); Y02E 10/547 (2013.01);
Abstract
Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.