The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Apr. 07, 2016
Micron Technology, Inc., Boise, ID (US);
Kuo-Yao Chou, Taichung, TW;
Micron Technology, Inc., Boise, ID (US);
Abstract
A patterns forming method begins with performing a lithography process on a photoresist film with a photomask having first apertures in a first mask region and second apertures in a second mask region to respectively form first main features and dummy features, on which the second mask region is located between the border of the photomask and the first mask region, and a size of each of the first apertures is greater than a size of each of the second apertures. Subsequently, a material is filled into the first main features to respectively form second main features and into the dummy features to seal the dummy features. Then, a substrate is etched to form patterned features by using the photoresist film having the second main features.