The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Feb. 03, 2015
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Fayaz Shaikh, Portland, OR (US);

Sirish Reddy, Hillsboro, OR (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); C23C 16/52 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); C23C 16/26 (2013.01); C23C 16/455 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/3299 (2013.01); H01J 37/32357 (2013.01); H01J 37/32935 (2013.01);
Abstract

A method for depositing an amorphous carbon hardmask film includes arranging a substrate in a processing chamber, supplying a carrier gas to the processing chamber, supplying a hydrocarbon precursor to the processing chamber, supplying fluorine precursor from a group consisting of WF, NF, SF, and Fto the processing chamber, one of supplying plasma to the processing chamber or creating plasma in the processing chamber, and depositing an amorphous carbon hardmask film on the substrate. Fluorine from the fluorine precursor combines with hydrogen from the hydrocarbon precursor in gas phase reactions.


Find Patent Forward Citations

Loading…