The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Dec. 28, 2012
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Zhaohui Chen, San Jose, CA (US);

Donald S. Gardner, Los Altos, CA (US);

Bum Ki Moon, Santa Clara, CA (US);

Charles W. Holzwarth, San Jose, CA (US);

Cary L. Pint, Nashville, TN (US);

Scott B. Clendenning, Portland, OR (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 1/18 (2006.01); H01G 11/24 (2013.01); G11C 13/00 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01G 11/24 (2013.01); G11C 13/0002 (2013.01); G11C 13/0016 (2013.01); H01L 28/82 (2013.01); Y02E 60/13 (2013.01); Y10T 29/435 (2015.01);
Abstract

In one embodiment, a structure for an energy storage device may include a first nanostructured substrate having a conductive layer and a dielectric layer formed on the conductive layer. A second nanostructured substrate includes another conductive layer. A separator separates the first and second nanostructured substrates and allows ions of an electrolyte to pass through the separator. The structure may be a nanostructured electrolytic capacitor with the first nanostructured substrate forming a positive electrode and the second nanostructured substrate forming a negative electrode of the capacitor.


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