The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Dec. 21, 2015
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Yasuhiko Kurosawa, Fujisawa, JP;

Tsuyoshi Atsumi, Ota, JP;

Masanobu Shirakawa, Chigasaki, JP;

Tokumasa Hara, Kawasaki, JP;

Naoya Tokiwa, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G06F 3/06 (2006.01); G11C 16/26 (2006.01); G11C 7/04 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G11C 7/04 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); G11C 29/52 (2013.01);
Abstract

According to one embodiment, a temperature of a non-volatile memory or an ambient temperature of the non-volatile memory is acquired. A distribution of a threshold voltage, which is corrected according to the acquired temperature, is acquired from the non-volatile memory. Read voltages related to the reading of data are detected from the distribution. Error correction is performed for data read from the non-volatile memory, using the read voltages. The detected read voltages are separately corrected on the basis of the acquired temperature when the error correction has failed.


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