Data-write device for resistance-change memory element

Abstract

A data-write device includes a write driver that causes a current to flow through a current path including an MTJ element or the other current path including the MTJ element in accordance with writing data to be written, thereby writing the write data into the MTJ element, a write completion detector which monitors the voltage at a first connection node or a second connection node in accordance with the write data after the writing of the write data into the MTJ element starts, detects the completion of writing of the write data based on the voltage at either node, and supplies a write completion signal indicating the completion of data write, and a write controller that terminates the writing of the write data into the MTJ element in response to the write completion signal supplied from the write completion detector.