The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Jul. 20, 2016
The University of Chicago, Chicago, IL (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Paul Franklin Nealey, Chicago, IL (US);
Tzu-Hsuan Chang, Madison, WI (US);
Shisheng Xiong, Darien, IL (US);
Zhenqiang Ma, Middleton, WI (US);
Michael Scott Arnold, Middleton, WI (US);
Robert Jacobberger, Madison, WI (US);
The University of Chicago, Chicago, IL (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.