The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Oct. 22, 2016
Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventors:

Anuj Madan, Cambridge, MA (US);

Hanching Fuh, Allston, MA (US);

Fikret Altunkilic, North Andover, MA (US);

Guillaume Alexandre Blin, Carlisle, MA (US);

Assignee:

Skyworks Solutions, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/48 (2006.01); H03K 17/16 (2006.01); H01L 25/00 (2006.01); H03K 17/693 (2006.01); H04B 1/44 (2006.01); H03K 17/687 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H04B 1/48 (2013.01); H01L 25/50 (2013.01); H03K 17/162 (2013.01); H03K 17/687 (2013.01); H03K 17/693 (2013.01); H04B 1/44 (2013.01); H01L 23/66 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Fabricating a radio-frequency switching circuit involves providing a substrate, forming, on the substrate, one or more field-effect transistors connected in series to define a radio-frequency signal path between an input end and an output end, each field-effect transistor having a source, a drain, a gate node, and a body node, and forming an element coupled to a selected body node of the one or more field-effect transistors connected in series to thereby provide reduced voltage distribution variation across the switching circuit.


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