The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Jun. 16, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Shengfen Chiu, Shanghai, CN;
Heng Cao, Shanghai, CN;
Abstract
A memory cell array structure includes memory cells arranged in m rows and n columns on a substrate, and n columns of first and second well regions with different conductivity types alternatively arranged along the column direction. Each of the memory cells includes first and second diodes. The first diode formed of a first doped region in the same column is disposed in the first well region. The second diode formed of a second doped region in the same column is disposed in the second well region. A third doped region having the conductivity type of the first well region is disposed in the first well region and is connected to the reset line of the same column. A fourth doped region having the conductivity type of the second well region is disposed in the second well region and is connected to the bit line of the same column.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile