The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Jul. 01, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Mattias B. Borg, Adliswil, CH;

Lukas Czornomaz, Zurich, CH;

Veeresh V. Deshpande, Zurich, CH;

Vladimir Djara, Kilchberg, CH;

Heike E. Riel, Baech, CH;

Heinz Schmid, Waedenswil, CH;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/148 (2006.01); H01L 31/0304 (2006.01); H01S 5/30 (2006.01); H01S 5/026 (2006.01); H01S 5/02 (2006.01); H01S 5/40 (2006.01); H01L 31/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1469 (2013.01); H01L 27/1465 (2013.01); H01L 27/14636 (2013.01); H01L 27/14694 (2013.01); H01L 27/14881 (2013.01); H01L 31/03046 (2013.01); H01L 31/12 (2013.01); H01S 5/021 (2013.01); H01S 5/0262 (2013.01); H01S 5/3013 (2013.01); H01S 5/4025 (2013.01);
Abstract

A method of fabrication of an array of optoelectronic structures. The method first provides a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells comprises an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portionsthat coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions.


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