The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Jun. 01, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Steven M. Shank, Jericho, VT (US);
Anthony K. Stamper, Burlington, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Thai Doan, Burlington, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/761 (2006.01); H01L 21/764 (2006.01); H01L 21/02 (2006.01); H01L 21/763 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/761 (2013.01); H01L 21/764 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 29/0646 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02573 (2013.01); H01L 21/02595 (2013.01); H01L 21/763 (2013.01); H01L 21/823493 (2013.01); H01L 29/0603 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to switches with deep trench depletion and isolation structures and methods of manufacture. The structure includes a bulk substrate with a fully depleted region below source and drain regions of at least one gate stack and confined by deep trench isolation structures lined with doped material.