The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Apr. 19, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Xiaofeng Qiu, Ballston Lake, NY (US);
Haigou Huang, Malta, NY (US);
Chang Ho Maeng, Cohoes, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 23/12 (2006.01); H01L 23/043 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/02167 (2013.01); H01L 21/3081 (2013.01); H01L 21/823437 (2013.01);
Abstract
A lithography method and accompanying structure for decreasing the critical dimension (CD) and improving the CD uniformity within semiconductor devices uses a layer of silicon carbide as an embedded blocking mask for defining semiconductor architectures, including contact trench openings to form trench silicide contacts.