The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Jul. 31, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Stephen W. Bedell, Wappingers Falls, NY (US);

Stephan A. Cohen, Wappingers Falls, NY (US);

Joel P. de Souza, Putnam Valley, NY (US);

Karen A. Nummy, Newburgh, NY (US);

Daniel J. Poindexter, Cornwall-on-Hudson, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 21/324 (2013.01);
Abstract

A silicon buffer layer selected from undoped silicon, p-doped silicon or a multilayered stack of, in any order, undoped silicon and p-doped silicon is provided between an nsilicon layer and an oxide layer of an SOI substrate. The presence of the silicon buffer layer reduces electron injection into the oxide layer during device processing which requires an electric field.


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