The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Oct. 17, 2012
Chi-hsien Huang, Kwei-Shan Tao-Yuan, TW;
Chao-sung Lai, Kwei-Shan Tao-Yuan, TW;
Chien Chou, Kwei-Shan Tao-Yuan, TW;
Chu-fa Chan, New Taipei, TW;
Chi-Hsien Huang, Kwei-Shan Tao-Yuan, TW;
Chao-Sung Lai, Kwei-Shan Tao-Yuan, TW;
Chien Chou, Kwei-Shan Tao-Yuan, TW;
Chu-Fa Chan, New Taipei, TW;
CHANG GUNG UNIVERSITY, Tao-Yuan, TW;
Abstract
The invention provides a plasma processing device, wherein the upper electrode and the lower electrode are in the vacuum chamber. The chip is placed in the lower electrode. The first plate is placed between the upper electrode and the lower electrode, and the first plate includes a plurality of first voids. The second plate is placed between the first plate and the lower electrode, and the second plate includes a plurality of second voids. The high frequency power is provided by the upper electrode and the lower electrode in the vacuum chamber, and the plasma is generated between the third plate and the upper electrode. The plasma is filtered by the third void, the first void, and the second void.