The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Dec. 21, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Ming Ho, Hsinchu, TW;

C. Y. (Chia-Yi) Chen, Hsinchu, TW;

Hsiu-Wen Hsueh, Taichung, TW;

Jun-Fu Huang, Zhunan Township, TW;

Shao-Heng Chou, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 7/20 (2006.01); G03F 1/44 (2012.01); G03F 1/70 (2012.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01); G03F 1/44 (2013.01); G03F 1/70 (2013.01); G03F 7/70283 (2013.01); G03F 7/70466 (2013.01); G06F 17/5009 (2013.01); G06F 2217/06 (2013.01); G06F 2217/12 (2013.01);
Abstract

A method includes generating a plurality of multiple patterning decompositions associated with a layout of an integrated circuit. Each of the plurality of multiple patterning decompositions includes a first pattern associated with a first mask, a second pattern associated with a second mask, the first mask and the second mask being two masks of a multiple patterning mask set, a width value associated with at least one of the first pattern or the second pattern, and a first spacing value between the first pattern and the second pattern. A file is generated comprising a plurality of dielectric constant values associated with the plurality of multiple patterning decompositions that are based on the width values and the first spacing values.


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