The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Feb. 26, 2014
Applicant:

AZ Electronic Materials (Luxembourg) S.a.r.l., Somerville, NJ (US);

Inventors:

Kazuma Yamamoto, Shizuoka, JP;

Yoshihiro Miyamoto, Shizuoka, JP;

Takashi Sekito, Shizuoka, JP;

Tatsuro Nagahara, Shizuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01); G03F 7/039 (2006.01); C09D 139/02 (2006.01); C09D 139/04 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); C09D 139/02 (2013.01); C09D 139/04 (2013.01); G03F 7/0392 (2013.01); G03F 7/20 (2013.01); G03F 7/325 (2013.01); G03F 7/405 (2013.01);
Abstract

The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.


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