The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Jun. 23, 2015
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Takashi Anazawa, Tokyo, JP;

Yoshitaka Kodama, Tokyo, JP;

Motohiro Yamazaki, Tokyo, JP;

Kunio Harada, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/64 (2006.01); G01N 21/01 (2006.01);
U.S. Cl.
CPC ...
G01N 21/6454 (2013.01); G01N 21/01 (2013.01); G01N 2201/06113 (2013.01);
Abstract

A laser beamirradiated from a side face of a microchipin which plural channelsfill ed with a member of a refractive index nin an inner portion of a member of a refractive index n(n<n) are arranged in parallel with the same plane, along the same plane is refracted in a direction of being directed from an upper base to a lower base in a case where a section of the channelis configured by a trapezoidal shape of upper base>lower base, and is deviated swiftly from a channel array. Hence, the laser beamis made to be deviated gradually from the channel array by irradiating the laser beamfrom the side face of the microchipby being inclined relative to the same plane in a direction of being directed from the lower base to the upper base. As a result, a larger number of the channelscan efficiently be subjected to laser beam irradiation.


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