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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9920450 B1

PDFFull Text
Date of Patent:
Mar. 20, 2018

Filed:

Dec. 14, 2012

Silicon carbide powder, method for manufacturing the same and method for growing single crystal

Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Byung Sook Kim, Seoul, KR;

Bum Sup Kim, Seoul, KR;

Kyoung Seok Min, Seoul, KR;

Dong Geun Shin, Seoul, KR;

Seo Yong Ha, Seoul, KR;

Jung Eun Han, Seoul, KR;

Assignee:

LG INNOTEK CO., LTD., Seoul, KR;

Attorney:

Saliwanchik, Lloyd & Eisenschenk

Primary Examiner:

Matthew J Song

Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 23/02 (2006.01); C01B 31/36 (2006.01); C30B 29/36 (2006.01); C01B 31/18 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 23/02 (2013.01); C01B 31/18 (2013.01); C01B 31/36 (2013.01); C30B 23/00 (2013.01); C30B 29/36 (2013.01); H01L 29/1608 (2013.01); Y10T 428/2982 (2015.01);
Abstract

A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Find Patent Forward Citations

Kim, Byung. (2018). Silicon carbide powder, method for manufacturing the same and method for growing single crystal (U.S. Patent No. 9920450). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9920450

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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