The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Dec. 14, 2012
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Byung Sook Kim, Seoul, KR;

Bum Sup Kim, Seoul, KR;

Kyoung Seok Min, Seoul, KR;

Dong Geun Shin, Seoul, KR;

Seo Yong Ha, Seoul, KR;

Jung Eun Han, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 23/02 (2006.01); C01B 31/36 (2006.01); C30B 29/36 (2006.01); C01B 31/18 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 23/02 (2013.01); C01B 31/18 (2013.01); C01B 31/36 (2013.01); C30B 23/00 (2013.01); C30B 29/36 (2013.01); H01L 29/1608 (2013.01); Y10T 428/2982 (2015.01);
Abstract

A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.


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